In my previous article, I have briefly introduced the physics of the quantum tunneling behavior in NeoPUF. In this article, I will explain, in detail, the quantum-tunneling mechanism in the gate oxide of MOSFET in advanced silicon processes and how it applies in the creation of NeoPUF characteristics.   I will use a two-dimensional cross section of a silicon dioxide atomic structure and a corresponding energy band diagram to explain trap-assisted electron tunneling.  Figure 1 illustrates electron […]

PUF stands for “Physically Unclonable Function” and is a physically derived “fingerprint” that serves as a unique identity for semiconductor devices. Their properties depend on the uniqueness and randomness of the physical factors induced during the manufacturing stage of a chip. These physical variations are unpredictable and unclonable; that’s why PUFs are suitable to serve […]

As semiconductor technology advances, SRAM is becoming outmoded as a reliable PUF security solution. With the onset of the 5G era, security is a major concern as billions of devices are connected to networks each year, making security indispensable at the same time as vulnerability increases. Hardware security solutions are crucial as the most fundamental […]